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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
δ掺杂制备P型氧化锌薄膜的方法
魏鸿源; 刘祥林; 张攀峰; 焦春美; 王占国
2008-10-08
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2007-04-05
Language中文
Application NumberCN200710065182.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/4211
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 魏鸿源,刘祥林,张攀峰,等. δ掺杂制备P型氧化锌薄膜的方法[P]. 2008-10-08.
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CN200710065182.0.pdf（413KB） 限制开放--Application Full Text
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