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SEMI OpenIR  > 中国科学院半导体研究所（2009年前）
InP单晶锭退火处理方法
赵友文; 段满龙
2007-03-28
Date Available2009-06-04 ; 2009-06-11
Subtype发明
Application Date2005-09-22
Language中文
Application Number200510086482
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/3581
Collection中国科学院半导体研究所（2009年前）
Recommended Citation
GB/T 7714		 赵友文,段满龙. InP单晶锭退火处理方法[P]. 2007-03-28.
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200510086482.pdf（289KB） 限制开放--Application Full Text
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