高密度1.3微米波段GaAs基、Si基InAs GaAs量子点激光器研究

	高密度1.3微米波段GaAs基、Si基InAs GaAs量子点激光器研究
	郝慧明
Subtype	博士
	2022-06
Degree Grantor	中国科学院大学
Place of Conferral	中国科学院半导体研究所
Language	中文
Date Available	2022-06
Document Type	学位论文
Identifier	http://ir.semi.ac.cn/handle/172111/31074
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	郝慧明. 高密度1.3微米波段GaAs基、Si基InAs GaAs量子点激光器研究[D]. 中国科学院半导体研究所. 中国科学院大学,2022.

Related Services

Bookmark

Google Scholar

Similar articles in Bing Scholar

Terms of Use

No data!

Social Bookmark/Share

All comments (0)

No comment.

The comment function is only available to registered usersLog In

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库