阶梯状组分渐变的AlN薄膜型冷阴极 | |
陈平; 赵德刚; 朱建军; 刘宗顺; 江德生; 杨辉 | |
Rights Holder | 中国科学院半导体所 |
Date Available | 2016-09-28 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 光电子学 |
Application Date | 2015-03-03 |
Application Number | CN201510094612.6 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/27584 |
Collection | 光电子研究发展中心 |
Recommended Citation GB/T 7714 | 陈平,赵德刚,朱建军,等. 阶梯状组分渐变的AlN薄膜型冷阴极. |
Files in This Item: | ||||||
File Name/Size | DocType | Version | Access | License | ||
阶梯状组分渐变的AlN薄膜型冷阴极.pd(356KB) | 限制开放 | License | Application Full Text |
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