| 阶梯状组分渐变的AlN薄膜型冷阴极 | |
| 陈平; 赵德刚; 朱建军; 刘宗顺; 江德生; 杨辉 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-09-28 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 光电子学 |
| Application Date | 2015-03-03 |
| Application Number | CN201510094612.6 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27584 |
| Collection | 光电子研究发展中心 |
| Recommended Citation GB/T 7714 | 陈平,赵德刚,朱建军,等. 阶梯状组分渐变的AlN薄膜型冷阴极. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 阶梯状组分渐变的AlN薄膜型冷阴极.pd（356KB） | 限制开放 | License | Application Full Text | |||
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