| 大晶格失配可调谐量子阱激光器外延芯片的制作方法 | |
| 罗帅; 季海铭; 杨涛 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-09-28 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2015-03-13 |
| Application Number | CN201510111671.X |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27577 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | 罗帅,季海铭,杨涛. 大晶格失配可调谐量子阱激光器外延芯片的制作方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 大晶格失配可调谐量子阱激光器外延芯片的制（446KB） | 限制开放 | License | Application Full Text | |||
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