| SiC基HEMT器件的制备方法 | |
| 申占伟; 张峰; 赵万顺; 王雷; 闫果果; 刘兴昉; 孙国胜; 曾一平 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-09-22 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2015-07-15 |
| Application Number | CN201510416658.5 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27497 |
| Collection | 中科院半导体材料科学重点实验室 |
| Recommended Citation GB/T 7714 | 申占伟,张峰,赵万顺,等. SiC基HEMT器件的制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| SiC基HEMT器件的制备方法.pdf（882KB） | 限制开放 | License | Application Full Text | |||
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