| Si衬底上GaN薄膜的生长方法及复合GaN薄膜 | |
| 刘波亭; 马平; 郭仕宽; 甄爱功; 张烁; 吴冬雪; 王军喜; 李晋闽 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-09-22 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体器件 |
| Application Date | 2015-08-17 |
| Application Number | CN201510504913.1 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27477 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | 刘波亭,马平,郭仕宽,等. Si衬底上GaN薄膜的生长方法及复合GaN薄膜. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Si衬底上GaN薄膜的生长方法及复合Ga（333KB） | 限制开放 | License | Application Full Text | |||
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