| 一种新型GaN基增强型HEMT器件及其制备方法 | |
| 贾利芳; 何志; 刘志强; 李迪; 樊中朝; 程哲; 梁亚楠; 王晓东; 杨富华 | |
| Rights Holder | 中国科学院半导体所 |
| Date Available | 2016-08-30 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 微电子学 |
| Application Date | 2014-11-28 |
| Application Number | CN201410708477.5 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/27273 |
| Collection | 半导体集成技术工程研究中心 |
| Recommended Citation GB/T 7714 | 贾利芳,何志,刘志强,等. 一种新型GaN基增强型HEMT器件及其制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 一种新型GaN基增强型HEMT器件及其制（683KB） | 限制开放 | License | Application Full Text | |||
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