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具有低特征导通电阻的SiC VDMOSFET结构及其制造方法
王进泽; 杨香; 颜伟; 刘胜北; 赵继聪; 何志; 王晓东; 杨富华
Rights Holder中国科学院半导体研究所
Date Available2016-08-30
Subject Area微电子学
Application Date2014-12-29
Application NumberCN201410838171.1
Document Type专利
Recommended Citation
GB/T 7714
王进泽,杨香,颜伟,等. 具有低特征导通电阻的SiC VDMOSFET结构及其制造方法.
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