SEMI OpenIR  > 中科院半导体材料科学重点实验室
4H-SiC肖特基二极管的设计、研究与制备
刘胜北
Subtype博士
Thesis Advisor孙国胜
2015-12-04
Degree Grantor中国科学院研究生院
Place of Conferral北京
Degree Discipline微电子与固体电子学
Keyword4h-sic 肖特基二极管 Jbs 沟槽型肖特基 欧姆接触
Subject Area半导体器件
Date Available2015-12-08
Document Type学位论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26628
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
刘胜北. 4H-SiC肖特基二极管的设计、研究与制备[D]. 北京. 中国科学院研究生院,2015.
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博士论文最终版1.pdf(4940KB) 限制开放LicenseApplication Full Text
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