SEMI OpenIR  > 半导体集成技术工程研究中心
多位高集成度垂直结构存储器的制备方法
付英春; 王晓峰; 杨富华
Rights Holder中国科学院半导体研究所
Date Available2014-09-17
Country中国
Subtype发明
Subject Area微电子学
Application Date2014-06-19
Application NumberCN201410276211.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25912
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
付英春,王晓峰,杨富华. 多位高集成度垂直结构存储器的制备方法.
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