在GaAs纳米线侧壁生长同质量子结构的MBE方法

	在GaAs纳米线侧壁生长同质量子结构的MBE方法
	査国伟; 李密锋; 喻颖; 王莉娟; 徐建星; 尚向军; 倪海桥; 贺振宏; 牛智川
Rights Holder	中国科学院半导体研究所
Date Available	2013-06-19
Country	中国
Subtype	发明
Subject Area	半导体物理
Application Date	2013-03-13
Application Number	CN201310079069.3
Document Type	专利
Identifier	http://ir.semi.ac.cn/handle/172111/25844
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	査国伟,李密锋,喻颖,等. 在GaAs纳米线侧壁生长同质量子结构的MBE方法.

Related Services

Bookmark

Google Scholar

Similar articles in Bing Scholar

Terms of Use

No data!

Social Bookmark/Share

All comments (0)

No comment.

The comment function is only available to registered usersLog In

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库