SEMI OpenIR  > 中科院半导体材料科学重点实验室
沟槽型MOS势垒肖特基二极管
郑柳; 孙国胜; 张峰; 刘兴昉; 王雷; 赵万顺; 闫果果; 董林; 刘胜北; 刘斌; 田丽欣; 曾一平
Rights Holder中国科学院半导体研究所
Date Available2014-02-12
Country中国
Subtype发明
Subject Area半导体材料
Application Date2013-08-28
Application NumberCN201320528050.8
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25782
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
郑柳,孙国胜,张峰,等. 沟槽型MOS势垒肖特基二极管.
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沟槽型MOS势垒肖特基二极管.pdf(241KB) 限制开放LicenseApplication Full Text
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