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一种生长GaN厚膜的自剥离方法
魏同波; 吴奎; 王军喜; 曾一平; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2014-05-07
Country中国
Subtype发明
Subject Area半导体器件
Application Date2014-01-29
Application NumberCN201410043314.X
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25777
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
魏同波,吴奎,王军喜,等. 一种生长GaN厚膜的自剥离方法.
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