| 提高发光效率的极性面氮化镓基发光器件 | |
| 姬小利; 闫建昌; 郭金霞; 张连; 杨富华; 段瑞飞; 王军喜; 曾一平; 王国宏; 李晋闽 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2014-06-25 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体器件 |
| Application Date | 2014-03-13 |
| Application Number | CN201410092505.5 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25752 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | 姬小利,闫建昌,郭金霞,等. 提高发光效率的极性面氮化镓基发光器件. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 提高发光效率的极性面氮化镓基发光器件.p（447KB） | 限制开放 | License | Application Full Text | |||
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