双波长锑化物应变量子阱半导体激光器及其制备方法

	双波长锑化物应变量子阱半导体激光器及其制备方法
	邢军亮; 张宇; 王国伟; 王娟; 王丽娟; 任正伟; 徐应强; 牛智川
Rights Holder	中国科学院半导体研究所
Date Available	2013-05-01
Country	中国
Subtype	发明
Subject Area	光电子学
Application Date	2013-01-25
Application Number	CN201310029832.1
Document Type	专利
Identifier	http://ir.semi.ac.cn/handle/172111/25686
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	邢军亮,张宇,王国伟,等. 双波长锑化物应变量子阱半导体激光器及其制备方法.

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