TiO2柱撑MoS2复合纳米材料用于二恶英无害化处理的方法

	TiO2柱撑MoS2复合纳米材料用于二恶英无害化处理的方法
	裴洋; 夏建白; 李京波
Rights Holder	中国科学院半导体研究所
Date Available	2013-07-23
Country	中国
Subtype	发明
Subject Area	半导体物理
Application Date	2013-05-04
Application Number	CN201410183663.1
Document Type	专利
Identifier	http://ir.semi.ac.cn/handle/172111/25669
Collection	半导体超晶格国家重点实验室
Recommended Citation GB/T 7714	裴洋,夏建白,李京波. TiO2柱撑MoS2复合纳米材料用于二恶英无害化处理的方法.

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