SEMI OpenIR  > 中科院半导体照明研发中心
一种具有DBR高反射结构的紫外发光二极管及其制备方法
曾建平; 闫建昌; 王军喜; 丛培沛; 孙莉莉; 董鹏; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2013-07-10
Country中国
Subtype发明
Subject Area半导体器件
Application Date2013-04-07
Application NumberCN201310118141.9
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25583
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
曾建平,闫建昌,王军喜,等. 一种具有DBR高反射结构的紫外发光二极管及其制备方法.
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