一种获得低稀释率涂层的激光熔覆方法 | |
林学春; 高文焱; 赵树森; 王奕博; 刘发兰; 周春阳 | |
Rights Holder | 中国科学院半导体研究所 |
Date Available | 2013-10-02 |
Country | 中国 |
Subtype | 发明 |
Subject Area | 半导体器件 |
Application Date | 2013-07-10 |
Application Number | CN201310288716.1 |
Document Type | 专利 |
Identifier | http://ir.semi.ac.cn/handle/172111/25548 |
Collection | 全固态光源实验室 |
Recommended Citation GB/T 7714 | 林学春,高文焱,赵树森,等. 一种获得低稀释率涂层的激光熔覆方法. |
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File Name/Size | DocType | Version | Access | License | ||
一种获得低稀释率涂层的激光熔覆方法.pd(1419KB) | 限制开放 | License | Application Full Text |
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