SEMI OpenIR  > 中科院半导体材料科学重点实验室
基于磁光光子晶体的4×4二进制发生器
郑婉华; 江斌; 王宇飞; 张冶金; 冯志刚
Rights Holder中国科学院半导体研究所
Date Available2012-10-03
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-06-12
Application NumberCN201210192819.3
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25417
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
郑婉华,江斌,王宇飞,等. 基于磁光光子晶体的4×4二进制发生器.
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