SEMI OpenIR  > 中科院半导体材料科学重点实验室
双异质结构氮化镓基高电子迁移率晶体管结构及制作 方法
王晓亮; 王翠梅; 肖红领; 彭恩超; 冯春; 姜丽娟; 陈竑
Rights Holder中国科学院半导体研究所
Date Available2012-12-26
Subject Area半导体材料
Application Date2012-09-18
Application NumberCN201210348006.9
Document Type专利
Recommended Citation
GB/T 7714
王晓亮,王翠梅,肖红领,等. 双异质结构氮化镓基高电子迁移率晶体管结构及制作 方法.
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