| 甚长波InAs/GaSb二类超晶格红外探测器材料的制备方法 | |
| 卫炀; 马文全; 张艳华; 曹玉莲 | |
| Rights Holder | 中国科学院半导体研究所 |
| Date Available | 2012-07-04 |
| Country | 中国 |
| Subtype | 发明 |
| Subject Area | 半导体材料 |
| Application Date | 2012-02-17 |
| Application Number | CN201210036863.5 |
| Document Type | 专利 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25362 |
| Collection | 纳米光电子实验室 |
| Recommended Citation GB/T 7714 | 卫炀,马文全,张艳华,等. 甚长波InAs/GaSb二类超晶格红外探测器材料的制备方法. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 甚长波InAs_GaSb二类超晶格红外探（715KB） | 限制开放 | License | Application Full Text | |||
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