SEMI OpenIR  > 半导体集成技术工程研究中心
与光刻分辨率无关的水平相变存储器的制备方法
付英春; 王晓峰; 张加勇; 季安; 杨富华
Rights Holder中国科学院半导体研究所
Date Available2012-07-18
Country中国
Subtype发明
Subject Area微电子学
Application Date2012-03-29
Application NumberCN201210088406.0
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25344
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
付英春,王晓峰,张加勇,等. 与光刻分辨率无关的水平相变存储器的制备方法.
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与光刻分辨率无关的水平相变存储器的制备方(767KB) 限制开放LicenseApplication Full Text
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