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利用热应力化学腐蚀分离蓝宝石和氮化镓基外延层的方法
汪炼成; 马骏; 刘志强; 伊晓燕; 王国宏
Rights Holder中国科学院半导体研究所
Date Available2012-10-03
Country中国
Subtype发明
Subject Area半导体器件
Application Date2012-06-19
Application NumberCN201210208501.X
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25332
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
汪炼成,马骏,刘志强,等. 利用热应力化学腐蚀分离蓝宝石和氮化镓基外延层的方法.
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