SEMI OpenIR  > 中科院半导体材料科学重点实验室
基于倏逝场耦合及周期微结构选频的混合硅单模激光器
张冶金; 渠红伟; 王海玲; 马绍栋; 郑婉华
Rights Holder中国科学院半导体研究所
Date Available2012-09-19
Country中国
Subtype发明
Subject Area半导体材料
Application Date2012-05-30
Application NumberCN201210174309.3
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25242
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
张冶金,渠红伟,王海玲,等. 基于倏逝场耦合及周期微结构选频的混合硅单模激光器.
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