| AlInGaN四元合金的外延生长及LED器件设计与制备 | |
| 冯向旭 | |
| Subtype | 博士 |
| Thesis Advisor | 王军喜 |
| 2014-05-28 | |
| Degree Grantor | 中国科学院大学 |
| Place of Conferral | 北京 |
| Degree Discipline | 材料物理与化学 |
| Keyword | Alingan Led Mocvd |
| Subject Area | 半导体材料 ; 半导体器件 |
| Date Available | 2014-06-03 |
| Document Type | 学位论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/25102 |
| Collection | 中科院半导体照明研发中心 |
| Recommended Citation GB/T 7714 | 冯向旭. AlInGaN四元合金的外延生长及LED器件设计与制备[D]. 北京. 中国科学院大学,2014. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| AlInGaN.pdf（26968KB） | 限制开放 | License | Application Full Text | |||
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