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利用飞秒激光制备金属-半导体接触电极的方法
徐晓娜; 李越强; 王晓东; 杨富华
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract一种利用飞秒激光制备金属-半导体接触电极的方法,包括如下步骤:步骤1:在晶片表面涂布抗蚀剂;步骤2:采用飞秒激光直写技术,在抗蚀剂表面形成图形;步骤3:采用电子束蒸发技术,在图形的表面蒸发金属,使金属附着于图形的上面,同时该金属还附着于剩余抗蚀剂的上面;步骤4:剥离晶片表面涂布的抗蚀剂,并同时剥离掉抗蚀剂上面的金属,得到金属-半导体接触电极。
metadata_83半导体集成技术工程研究中心
Patent NumberCN201010283562.3
Language中文
Status公开
Application NumberCN201010283562.3
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22349
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
徐晓娜,李越强,王晓东,等. 利用飞秒激光制备金属-半导体接触电极的方法. CN201010283562.3.
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