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栅极调制垂直结构GaN基发光二极管的器件结构及制备方法
刘志强; 郭恩卿; 伊晓燕; 汪炼成; 王国宏; 李晋闽
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract一种栅极调制垂直结构GaN基发光二极管结构,包括:一导电衬底;一p型GaN层,该p型GaN层制作在导电衬底上;一多量子阱有源层,该多量子阱有源层制作在p型GaN层上;一n型GaN层,该n型GaN层制作在多量子阱有源层上;一N电极,该N电极制作在n型GaN层上面的中间;一栅极绝缘层,该栅极绝缘层制作在n型GaN层上没有N电极的部分,并围绕N电极;一栅电极,制作在栅极绝缘层上。
metadata_83中科院半导体照明研发中心
Patent NumberCN201010534772.5
Language中文
Status公开
Application NumberCN201010534772.5
Patent Agent汤保平
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22119
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
刘志强,郭恩卿,伊晓燕,等. 栅极调制垂直结构GaN基发光二极管的器件结构及制备方法. CN201010534772.5.
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