SEMI OpenIR  > 集成光电子学国家重点实验室
一种硅基光电器件集成方法
李运涛; 俞育德; 余金中
Rights Holder中国科学院半导体研究所
Date Available2011-08-30
Country中国
Subtype发明
Abstract本发明公开了一种硅基光电器件集成方法,该方法包括:在硅衬底上制备电子学器件;在已经制备硅电子学器件的硅衬底上制备二氧化硅层;在二氧化硅层上制备多晶硅;在多晶硅上制备硅光子学器件;刻蚀过孔,淀积金属实现电学互连。本发明提供的硅基光电器件集成方法所采用的工艺均为微电子标准工艺,易于实现,合格率高,且集成度高,单片集成,易于封装,尤其适合于高速电子学器件与光学器件集成芯片的制备。
metadata_83集成光电子学国家重点实验室
Patent NumberCN200910091402.6
Language中文
Status公开
Application NumberCN200910091402.6
Patent Agent周国城
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22037
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
李运涛,俞育德,余金中. 一种硅基光电器件集成方法. CN200910091402.6.
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