| MOCVD生长GaN中与缺陷相关的现象研究 | |
侯奇峰
| |
| Subtype | 博士 |
| Thesis Advisor | 王晓亮 |
| 2011 | |
| Degree Grantor | 中国科学院研究生院 |
| Place of Conferral | 北京 |
| Degree Discipline | 材料物理与化学 |
| Subject Area | 半导体材料 |
| Date Available | 2011-06-03 |
| Document Type | 学位论文 |
| Identifier | http://ir.semi.ac.cn/handle/172111/20748 |
| Collection | 半导体材料科学中心 |
| Recommended Citation GB/T 7714 | 侯奇峰. MOCVD生长GaN中与缺陷相关的现象研究[D]. 北京. 中国科学院研究生院,2011. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| MOCVD生长GaN中与缺陷相关的现象研（3762KB） | 限制开放 | License | Application Full Text | |||
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