Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate
Jiang DS; Ramsteiner M; Brandt O; Ploog KH; Tews H; Graber A; Averbeck R; Riechert H; Jiang DS Paul Drude Inst Solid State Elect D-10117 Berlin Germany.
1998
会议名称24th IEEE International Symposium on Compound Semiconductors
会议录名称COMPOUND SEMICONDUCTORS 1997, 156
页码211-214
会议日期SEP 08-11, 1997
会议地点SAN DIEGO, CALIFORNIA
出版地TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX
出版者IOP PUBLISHING LTD
ISSN0951-3248
ISBN0-7503-0556-8
部门归属paul drude inst solid state elect, d-10117 berlin, germany; chinese acad sci, inst semicond, beijing 100083, peoples r china; siemens corp res & dev, d-81730 munich, germany
摘要We analyze low-temperature Raman and photoluminescence spectra of MBE-grown GaN layers on sapphire. Strong and sharp Raman peaks are observed in the low frequency region. These peaks, which are enhanced by excitation in resonance with yellow luminescence transitions, are attributed to electronic transitions related to shallow donor levels in hexagonal GaN. It is proposed that a low frequency Raman peak at 11.7 meV is caused by a pseudo-local vibration mode related to defects involved in yellow luminescence transitions. The dependence of the photoluminescence spectra on temperature gives additional information about the residual impurities in these GaN layers.
关键词Shallow Donors
学科领域半导体物理
主办者IEEE.; Motorola.; USN, Off Naval Res.; Siemens.; Aixtron.; EPI.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/15081
专题中国科学院半导体研究所(2009年前)
通讯作者Jiang DS Paul Drude Inst Solid State Elect D-10117 Berlin Germany.
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Jiang DS,Ramsteiner M,Brandt O,et al. Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate[C]. TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX:IOP PUBLISHING LTD,1998:211-214.
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