Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures

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	Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures
	Wang YJ; Nickel HA; McCombe BD; Peeters FM; Shi JM; Hai GQ; Wu XG; Eustis TJ; Schaff W; Wang YJ Florida State Univ Natl High Magenet Field Lab 1800 E Paul Dirac Dr Tallahassee FL 32306 USA.
	1998
会议名称	8th International Conference on Modulated Semiconductor Structures
会议录名称	PHYSICA E, 2 (1-4)
页码	161-165
会议日期	JUL 14-18, 1997
会议地点	SANTA BARBARA, CALIFORNIA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	1386-9477
部门归属	florida state univ, natl high magenet field lab, tallahassee, fl 32306 usa; suny buffalo, dept phys, buffalo, ny 14260 usa; univ instelling antwerp, dept nat kunde, uia, b-2610 wilrijk, belgium; univ fed sao carlos, dept fis, br-13565905 sao carlos, sp, brazil; chinese acad sci, natl lab superlattices & microstruct, inst semicond, beijing, peoples r china; cornell univ, dept elect engn, ithaca, ny 14853 usa
摘要	A detailed experimental study of electron cyclotron resonance (CR) has been carried out at 4.2 K in three modulation-doped GaAs/Al0.3Ga0.7As multiple quantum well samples in fields up to 30 T. A strong avoided-level-crossing splitting of the CR energies due to resonant magnetopolaron effects is observed for all samples near the GaAs reststrahlen region. Resonant splittings in the region of AlAs-like interface phonon modes of the barriers are observed in two samples with narrower well width and smaller doping concentration. The interaction between electrons and the AlAs interface optical phonon modes has been calculated for our specific sample structures in the framework of the memory-function formalism. The calculated results are in good agreement with the experimental results, which confirms our assignment of the observed splitting near the AlAs-like phonon region is due to the resonant magnetopolaron interaction of electrons in the wells with AlAs-like interface phonons. (C) 1998 Elsevier Science B.V. All rights reserved.
关键词	Resonant Magnetopolaron Effects Gaas/algaas Quantum Well Structures Interface Phonons Electron-optical-phonon Interaction Polaron-cyclotron-resonance Phonon Modes Gaas Heterostructures Superlattices Electrons
学科领域	半导体物理
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15069
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang YJ Florida State Univ Natl High Magenet Field Lab 1800 E Paul Dirac Dr Tallahassee FL 32306 USA.
推荐引用方式 GB/T 7714	Wang YJ,Nickel HA,McCombe BD,et al. Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,1998:161-165.

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