Methods to tune the electronic states of self-organized InAs/GaAs quantum dots

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Methods to tune the electronic states of self-organized InAs/GaAs quantum dots
	Wang H; Niu ZC; Zhu HJ; Wang ZM; Jiang DS; Feng SL; Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
	2000
会议名称	5th International Conference on the Electrical Transport and Optical Properties of Inhomogeneous Media (ETOPIM5)
会议录名称	PHYSICA B-CONDENSED MATTER, 279 (1-3)
页码	217-219
会议日期	JUN 21-25, 1999
会议地点	HONG KONG, HONG KONG
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0921-4526
部门归属	chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china
摘要	After capping InAs islands with a thin enough GaAs layer, growth interruption has been introduced. Ejected energy of self-organized InAs/GaAs quantum dots has been successfully tuned in a controlled manner by changing the thickness of GaAs capping layer and the time of growth interruption and InAs layer thickness. The photoluminescence (PL) spectra showing the shift of the peak position reveals the tuning of the electronic states of the QD system. Enhanced uniformity of Quantum dots is observed judging from the decrease of full width at half maximum of FL. Injection InAs/GaAs quantum dot lasers have been fabricated and performed on various frequencies. (C) 2000 Published by Elsevier Science B.V. All rights reserved.
关键词	Quantum Dot Growth Interruption Quantum Dot Laser
学科领域	半导体物理
主办者	Lee Hysan Fdn.; Croucher Fdn.; KC Wong Educ Fdn.; Schlumberger Doll Res.; ARO FE.; AFOSR AOARD.; ONRASIA.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15007
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang H Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang H,Niu ZC,Zhu HJ,et al. Methods to tune the electronic states of self-organized InAs/GaAs quantum dots[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:217-219.

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