Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

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	Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy
	Jiang WH; Xu HZ; Xu B; Ye XL; Zhou W; Ding D; Liang JB; Wang ZG; Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	50th IUMRS International Conference on Advanced Materials
会议录名称	PHYSICA E, 8 (2)
页码	134-140
会议日期	JUN 13-18, 1999
会议地点	BEIJING, PEOPLES R CHINA
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	1386-9477
部门归属	chinese acad sci, inst semicond, inst semicond mat sci, beijing 100083, peoples r china
摘要	In this paper, In0.5Ga0.5As quantum dots are fabricated on GaAs (100) and (n11)A/B (n = 3, 5) substrates by molecular beam epitaxy. Atomic force microscopy shows that the quantum dots on each oriented substrate are different in size, shape and distribution. In addition, photoluminescence spectra from these quantum dots are different in emission peak position, line width and integrated intensity. Auger electron spectra demonstrate that In concentration is larger near the surface than inside quantum dots, suggesting the occurrence of surface segregation effect during the growth of InGaAs dots. The surface segregation effect is found to be related to substrate orientation. (C) 2000 Elsevier Science B.V. All rights reserved.
关键词	Quantum Dots High Index Molecular Beam Epitaxy Photoluminescence Surface Segregation Oriented Gaas Ingaas Islands Wells Disks
学科领域	半导体材料
主办者	Lab Semiconduct Mat Sci.; Inst Semiconduct.; Chinese Acad Sci.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14967
专题	中国科学院半导体研究所（2009年前）
通讯作者	Jiang WH Chinese Acad Sci Inst Semicond Inst Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Jiang WH,Xu HZ,Xu B,et al. Influence of substrate orientation on In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:134-140.

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