In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE
	Lu DC; Wang CX; Yuan HR; Liu XL; Wang XH; Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat & Sci POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	10th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-X)
会议录名称	JOURNAL OF CRYSTAL GROWTH, 221
页码	356-361
会议日期	JUN 05-09, 2000
会议地点	SAPPORO, JAPAN
出版地	PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者	ELSEVIER SCIENCE BV
ISSN	0022-0248
部门归属	chinese acad sci, inst semicond, lab semicond mat & sci, beijing 100083, peoples r china
摘要	The effects of in situ annealing treatment in the initial growth stage and In-doping during growth of the GaN on the material properties were investigated. GaN was grown by LP-MOVPE. In situ annealing reduced the full-width at half-maximum (FWHM) of X-ray rocking curves and reduced etch pit density of GaN films. It improved the optical properties of the epilayer. Undoped and In-doped GaN films of initial growth stage were investigated. It was found that morphology and optical properties were improved in In-doped samples. (C) 2000 Elsevier Science B.V. All rights reserved.
关键词	Gan Annealing Treatment In-doping Movpe Photoluminescence Chemical-vapor-deposition Phase Epitaxy Buffer Layer Films Sapphire
学科领域	半导体材料
主办者	Japan Soc Appl Phys.; Res Ctr Interface Quantum Electr.; Hokkaido Univ.; Asahi Glass Fdn.; Casio Sci Promot Fdn.; Fdn Promot Mat Sci & Technol Japan.; Inoue Fdn Sci.; Izumi Fdn Sci & Technol.; Nippon Steel Glass Fdn Mat Sci.; Ogasawara Fdn Sci & Technol.; Sapporo City Int Plaza.; Air Water Corp.; AIXTRON AG.; Daido Air Prod Electr Co Ltd.; Eiko Engn Corp.; EMF Ltd.; EPICHEM Ltd.; Furukawa Elect Corp.; Hitachi Ltd.; Hitachi Cable Ltd.; Hitachi Plant Engn & Construct Co Ltd.; Int Quantum Epitaxy Plc.; Kyoto Semicond Corp.; Matsushita Elect Ind Co Ltd.; Mitsubishi Chem Co Ltd.; MOCHEM GmbH.; NEC Corp.; Nichic Chem Co Ltd.; Nippon Sanso Corp.; NTT Bas Res Lab.; Oki Elect Ind Co Ltd.; Rohm Co Ltd.; Sony Corp.; Sumitomo Elect Ind Ltd.; Toshiba Corp.; Toyada Gossei Co Ltd.; Ube Ind Ltd.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14961
专题	中国科学院半导体研究所（2009年前）
通讯作者	Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat & Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Lu DC,Wang CX,Yuan HR,et al. In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2000:356-361.

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