Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition

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	Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition
	Sun XL; Yang H; Zhu JJ; Wang YT; Chen Y; Li GH; Wang ZG; Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA.
	2001
会议名称	4th International Conference on Nitride Semiconductors (ICNS-4)
会议录名称	PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2)
页码	653-657
会议日期	JUL 16-20, 2001
会议地点	DENVER, COLORADO
出版地	PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	0031-8965
部门归属	cas, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china; cas, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; cas, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	In this paper. we investigate the influences of the initial nitridation of sapphire substrates on the optical and structural characterizations in GaN films. Two GaN samples with and without 3 min nitridation process were investigated by photoluminescence (PL) spectroscopy in the temperature range of 12-300 K and double-crystal X-ray diffraction (XRD). In the 12 K PL spectra of the GaN sample without nitridation, four dominant peaks at 3.476, 3.409 3.362 and 3.308 eV were observed, which were assigned to donor bound exciton, excitons bound to stacking faults and extended structural defects. In the sample with nitridation, three peaks at 3.453, 3.365. and 3.308 eV were observed at 12 K, no peak related to stacking faults. XRD results at different reflections showed that there are more stacking faults in the samples without nitridation.
关键词	Gallium Nitride Luminescence Bulk
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14909
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA.
推荐引用方式 GB/T 7714	Sun XL,Yang H,Zhu JJ,et al. Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition[C]. PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2001:653-657.

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