On the nature of iron in InP: A FTIR study

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	On the nature of iron in InP: A FTIR study
	Han YJ; Liu XL; Lao JH; Lin LY; Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	Conference on Integrated Optoelectronics II
会议录名称	INTEGRATED OPTOELECTRONICS II, 3551
页码	1-4
会议日期	SEP 18-19, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3012-9
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Fe is still the commonly used dopant to fabricate semi-insulating(SI) InP, a key material for high-speed electronic and optoelectronic devices. High resolved absorption spectra of the internal d-d shell transitions at Fe2+ in InP and the related phonon sidebands and a series of iron related absorption Lines are presented. Detailed infrared absorption study of the characteristic spectra of four zero-phonon lines(ZPLs), which are attributed to transitions within the 5D ground state of Fe2+ (3d(6)) on the indium site in a tetrahedral crystal field of phosphorus atoms and their temperature effects are given.
关键词	Iron Phonon Sideband Semi-insulating Inp
学科领域	光电子学
主办者	SPIE Int Soc Opt Engn.; COS Chinese Opt Soc.; COEMA.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13851
专题	中国科学院半导体研究所（2009年前）
通讯作者	Han YJ Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Han YJ,Liu XL,Lao JH,et al. On the nature of iron in InP: A FTIR study[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:1-4.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
3028.pdf（167KB）			限制开放	--	请求全文