JFET SOS devices: Processing and gamma radiation effects

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	JFET SOS devices: Processing and gamma radiation effects
	Nie JP; Liu ZL; He ZJ; Yu F; Li GH; Nie JP Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
	1998
Conference Name	5th International Conference on Solid-State and Integrated Circuit Technology
Source Publication	1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
Pages	67-70
Conference Date	OCT 21-23, 1998
Conference Place	BEIJING, PEOPLES R CHINA
Publication Place	345 E 47TH ST, NEW YORK, NY 10017 USA
Publisher	IEEE
ISBN	0-7803-4306-9
metadata_83	chinese acad sci, inst semicond, beijing 100083, peoples r china
Abstract	A process for fabricating n channel JFET/SOS (junction field-effect transistors on silicon-on-sapphire) has been researched. The gate p(+)n junction was obtained by diffusion, and the conductive channel was gotten by a double ion implantation. Both enhancement and depletion mode transistors were fabricated in different processing conditions. From the results of the Co-50 gamma ray irradiation experimental we found that the devices had a good total dose radiation-hardness. When the tot;ll dose was 5Mrad(Si), their threshold voltages shift was less than 0.1V. The variation of transconductance and the channel leakage current were also little.
Keyword	Silicon
Subject Area	半导体材料
Funding Organization	Chinese Inst Electr.; IEEE Electron Devices Soc.; IEEE Solid State Circuits Soc.; Japan Soc Appl Phys.; URSI Commiss D.; IEE, Electr Div, UK.; Korea Inst Telemat & Electr.; IEEE Beijing Sect.; Mat Res Soc.; Natl Nat Sci Fdn China.
Indexed By	CPCI-S
Language	英语
Document Type	会议论文
Identifier	http://ir.semi.ac.cn/handle/172111/13817
Collection	中国科学院半导体研究所（2009年前）
Corresponding Author	Nie JP Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Recommended Citation GB/T 7714	Nie JP,Liu ZL,He ZJ,et al. JFET SOS devices: Processing and gamma radiation effects[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,1998:67-70.

Files in This Item:
File Name/Size	DocType	Version	Access	License
2986.pdf（209KB）			限制开放	--	Application Full Text

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院半导体研究所机构知识库