Growth and characterization of GaN on LiGaO2 and LiAlO2

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Growth and characterization of GaN on LiGaO2 and LiAlO2
	Duan SK; Teng XG; Han PD; Lu DC; Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China.
	1998
会议名称	2nd International Symposium on Blue Laser and Light Emitting Diodes (2nd ISBLLED)
会议录名称	BLUE LASER AND LIGHT EMITTING DIODES II
页码	158-161
会议日期	SEP 29-OCT 02, 1998
会议地点	CHIBA, JAPAN
出版地	1-3 KANDA NISHIKI-CHO, CHIYODA-KU, TOKYO, 101, JAPAN
出版者	OHMSHA LTD
ISBN	4-274-90245-5
部门归属	chinese acad sci, inst semicond, natl integrated optoelect lab, beijing 100083, peoples r china
摘要	The nearly lattice-matched LiGaO2 and LiAlO2 substrates have been used for the growth of GaN by LP-MOVPE. GaN epilayers have been grown on the two substrates at very low input partial pressure of hydrogen and relatively low growth temperature. The difference in the growth rate, crystal and optical qualities of hexagonal GaN epilayers grown on LiAlO2 and LiGaO2 substrate with two polar domains are investigated. LiAlO2 and LiGaO2 single crystal with a single domain structure and an adequate surface plane are promising substrates for the growth of high quality of hexagonal GaN thin films.
关键词	Diodes
学科领域	半导体材料
主办者	Japan Soc Promot Sci, 162nd & 125th Comm.; Support Ctr Adv Telecommun Technol Res Fdn.; Nippon Sheet Glass Fdn Mat Sci.; Res Fdn Electrotechnol Chubu.; Inoue Fdn Sci.; Chiba Convent Bureau.; Ogasawara Fdn Promot Sci & Engn.; Izumi Sci & Technol Fdn.; Murata Sci Fdn.; Telecommun Advancement Fdn.; Suzuki Fdn.; FUTABA Electr Memorial Fdn.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13805
专题	中国科学院半导体研究所（2009年前）
通讯作者	Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Duan SK,Teng XG,Han PD,et al. Growth and characterization of GaN on LiGaO2 and LiAlO2[C]. 1-3 KANDA NISHIKI-CHO, CHIYODA-KU, TOKYO, 101, JAPAN:OHMSHA LTD,1998:158-161.