Modulation magnesium-doping in AlGaN/GaN superlattices

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Modulation magnesium-doping in AlGaN/GaN superlattices
	Liu XL; Yuan HR; Lu DC; Wang XH; Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	2000
会议名称	International Workshop on Nitride Semiconductors (IWN 2000)
会议录名称	PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1
页码	732-735
会议日期	SEP 24-27, 2000
会议地点	NAGOYA, JAPAN
出版地	DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN
出版者	INST PURE APPLIED PHYSICS
ISBN	4-900526-13-4
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	Low resistivity of p-type Mg-doped AlGaN/GaN superlattices (SLs) is demonstrated. The resistivity of the SLs is less than 0.6 Omega .cm. and the measured hole concentration is higher than 1x10(18)cm(-3). The resistivity of SLs is much lower, and the hole concentration of SLs is much higher, than that of bulk GaN and AlGaN, The electrical properties of the SLs are less sensitive than the conventional bulk lavers.
关键词	Mg-doped Algan/gan Superlattices Resistivity Hole Concentration Polarization
学科领域	半导体物理
主办者	Japan Soc Appl Phys, Solid State Phys & Applicat Div.; Japan Soc Promot Sci, Comm Short Wavelength Optoelectr Devices, 162.; Japan Soc Promot Sci, Comm Convers Light & Elect, 125.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13743
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Liu XL,Yuan HR,Lu DC,et al. Modulation magnesium-doping in AlGaN/GaN superlattices[C]. DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN:INST PURE APPLIED PHYSICS,2000:732-735.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
2900.pdf（277KB）			限制开放	--	请求全文