MOCVD growth of cubic GaN: Materials and devices

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	MOCVD growth of cubic GaN: Materials and devices
	Yang H; Zhang SM; Xu DP; Li SF; Zhao DG; Fu Y; Sun YP; Feng ZH; Zheng LX; Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
	2000
会议名称	International Workshop on Nitride Semiconductors (IWN 2000)
会议录名称	PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1
页码	64-69
会议日期	SEP 24-27, 2000
会议地点	NAGOYA, JAPAN
出版地	DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN
出版者	INST PURE APPLIED PHYSICS
ISBN	4-900526-13-4
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, natl res ctr optoelect, beijing 100083, peoples r china
摘要	Many impressive progresses have been made recently on the growth of cubic-phase GaN by MBE and MOCVD. In this paper, some of our recent progress will be reviewed, including the growth of high quality cubic InGaN films, InGaN/GaN heterostructure blue and green LEDs. Cubic-phase GaN films were grown on GaAs (100) substrates by MOCVD. Growth conditions were optimized to obtain pure cubic phase GaN films up to a thickness of 4 mum. An anomalous compressive strain was found in the as-grown GaN films in spite of a smaller lattice constant for GaN compared with that of GaAs substrates. The photoluminescence FWHM of high quality InGaN epilayers was less than 100 meV The InGaN/GaN heterostructure blue LED has intense electroluminescence with a FWHM of 20 nm.
关键词	Mocvd Gan Ingan Cubic Led Chemical-vapor-deposition Molecular-beam Epitaxy Gallium Nitride Phase Epitaxy Ingan Films Electroluminescence Zincblende Wurtzite Mbe
学科领域	半导体材料
主办者	Japan Soc Appl Phys, Solid State Phys & Applicat Div.; Japan Soc Promot Sci, Comm Short Wavelength Optoelectr Devices, 162.; Japan Soc Promot Sci, Comm Convers Light & Elect, 125.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13709
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yang H Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Natl Res Ctr Optoelect Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Yang H,Zhang SM,Xu DP,et al. MOCVD growth of cubic GaN: Materials and devices[C]. DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN:INST PURE APPLIED PHYSICS,2000:64-69.

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