Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well
	Ying-Qiang X; Zhang W; Niu ZC; Wu RG; Wang QM; Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
	2004
会议名称	Asia-Pacific Optical and Wireless Communications Conference (APOC 2003)
会议录名称	APOC 2003:ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS, ACTIVE DEVICES, AND OPTICAL AMPLIFIERS, PTS 1 AND 2, 5280
页码	594-599
会议日期	NOV 04-06, 2003
会议地点	Wuhan, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-5175-4
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Effects of SiO2, encapsulation and rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs single quantum well (SQW) were studied by low temperature photoluminescence (PL). A blueshift of the PL peak energy for both the SiO2-capped region and the bare region was observed. The results were attributed to the nitrogen reorganization in the GaNAs/GaAs SQW. It was also shown that the nitrogen reorganization was obviously enhanced by SiO2 cap-layer. A simple model [1] was used to describe the SiO2-enhanced blueshift of the low temperature PL peak energy.
关键词	Ganas Sio2 Encapsulation Rapid-thermal-annealing Nitrogen Reorganization Molecular-beam Epitaxy Optical-properties Mu-m
学科领域	半导体物理
主办者	SPIE.; Chinese Opt Soc.; Wuhan Municipal Govt.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13581
专题	中国科学院半导体研究所（2009年前）
通讯作者	Ying-Qiang X Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Ying-Qiang X,Zhang W,Niu ZC,et al. Effect of SiO2 encapsulation on the nitrogen reorganization in GaNAs/GaAs single quantum well[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,2004:594-599.

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