A novel low-power input-independent MOS AC/DC charge pump

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	A novel low-power input-independent MOS AC/DC charge pump
	Yao, Y; Shi, Y; Dai, FF; Yao, Y, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
	2005
会议名称	IEEE International Symposium on Circuits and Systems (ISCAS)
会议录名称	2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)丛书标题: IEEE INTERNATIONAL SYMP ON CIRCUITS AND SYSTEMS
页码	VOLS 1-6 CONFERENCE PROCEEDINGS: 380-383
会议日期	MAY 23-26, 2005
会议地点	Kobe, JAPAN
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISSN	0277-674X
ISBN	0-7803-8834-8
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	This paper presents a novel fully integrated MOS AC to DC charge pump with low power dissipation and stable output for RFID applications. To improve the input sensitivity, we replaced Schottky-diodes in conventional charge pumps with MOS diodes with zero threshold, which has less process defects and is thus more compatible with other circuits. The charge pump in a RFID transponder is implemented in a 0.35um CMOS technology with 0.24 sq mm die size. The analytical model of the charge pump and the simulation results are presented.
学科领域	微电子学
主办者	IEEE Circuits & Syst Soc.; Sci Council Japan.; Inst Elect, Informat & Commun Engineers.; Inst Elect Engineers Japan.; Informat Proc Soc Japan.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10130
专题	中国科学院半导体研究所（2009年前）
通讯作者	Yao, Y, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Yao, Y,Shi, Y,Dai, FF,et al. A novel low-power input-independent MOS AC/DC charge pump[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2005:VOLS 1-6 CONFERENCE PROCEEDINGS: 380-383.

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