Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces
	Sun, GS; Ning, J; Zhang, YX; Gao, X; Wang, L; Zhao, WS; Zeng, YP; Li, JM; Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2004
会议名称	7th International Conference on Solid-State and Integrated Circuits Technology
会议录名称	2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY
页码	VOLS 1- 3 PROCEEDINGS: 2349-2352
会议日期	OCT 18-21, 2004
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8511-X
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Homoepitaxial growth of 4H-SiC on off-oriented n-type Si-face (0001) substrates was performed in a home-made hot-wall low pressure chemical vapor deposition (LPCVD) reactor with SiH4 and C2H4 at temperature of 1500 C and pressure of 20 Torr. The surface morphology and intentional in-situ NH3 doping in 4H-SiC epilayers were investigated by using atomic force microscopy (AFM) and secondary ion mass spectroscopy (SIMS). Thermal oxidization of 4H-SiC homoepitaxial layers was conducted in a dry O-2 and H-2 atmosphere at temperature of 1150 C. The oxide was investigated by employing x-ray photoelectron spectroscopy (XPS). 4H-SiC MOS structures were obtained and their C-V characteristics were presented.
关键词	4h-sic Lpcvd Homoepitaxial Growth Thermal Oxidization Mos Structures Hot-wall Cvd
学科领域	半导体材料
主办者	Chinese Inst Elect.; IEEE Beijing Sect.; IEEE Elect Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid-State Circuits Soc.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; IEE Elect Div.; URSI Commiss D.; Inst Elect Engineers Korea.; Natl Nat Sci Fdn China.; Beijing Municipal Bureau Ind Dev.; Peking Univ.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10108
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Sun, GS,Ning, J,Zhang, YX,et al. Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:VOLS 1- 3 PROCEEDINGS: 2349-2352.

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