Behavior model of a CMOS process compatible photo-diode

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Behavior model of a CMOS process compatible photo-diode
	Gao P; Chen HD; Mao LH; Gao, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
	2004
会议名称	1st IEEE International Conference on Group IV Photonics
会议录名称	2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS
页码	110-112
会议日期	SEP 29-OCT 01, 2004
会议地点	Hong Kong, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	0-7803-8474-1
部门归属	chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	A behavior model of a photo-diode is presented. The model describes the relationship between photocurrent and incident optical power, and it also illustrates the impact of the reverse bias to the variation of the junction capacitance. With this model, the photo-diode and a CMOS receiver circuit were simulated and designed simultaneously under a universal circuit simulation environment.
关键词	Receivers
学科领域	光电子学
主办者	IEEE.
收录类别	其他
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10062
专题	中国科学院半导体研究所（2009年前）
通讯作者	Gao, P, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Gao P,Chen HD,Mao LH,et al. Behavior model of a CMOS process compatible photo-diode[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2004:110-112.

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