Growth of ZnO single crystal by chemical vapor transport method

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Growth of ZnO single crystal by chemical vapor transport method
	Zhou, JM; Dong, ZY; Wei, XC; Duan, ML; Li, JM; Zhou, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
	2006
会议名称	3rd Asian Conference on Crystal Growth and Crystal Technology (CGCT-3)
会议录名称	JOURNAL OF RARE EARTHS
页码	24: 4-7 Sp. Iss. SI
会议日期	OCT 16-19, 2005
会议地点	Beijing, PEOPLES R CHINA
出版地	2 XINJIEKOUWAI DAJIE, BEIJING 100088, PEOPLES R CHINA
出版者	METALLURGICAL INDUSTRY PRESS
ISSN	1002-0721
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	ZnO crystals were grown by CVT method in closed quartz tube under seeded condition. Carbon was used as a transport agent to enhance the chemical transport of ZnO in the growth process. ZnO single crystals were grown by using GaN/sapphire and GaN/Si wafer as seeds. The property and crystal quality of the ZnO single crystals was studied by photoluminescence spectroscopy and X-ray diffraction technique.
关键词	Zinc Oxide
学科领域	半导体材料
主办者	Chinese Assoc Crystal Growth.; Crystal Mat Shandong Univ, State Key Lab.; CAS, Tech Inst Phys & Chem.; Res Inst Synthet Crystal.; Japanese Soc Promot Sci, 161 Comm.
收录类别	CPCI（ISTP）
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/10026
专题	中国科学院半导体研究所（2009年前）
通讯作者	Zhou, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
推荐引用方式 GB/T 7714	Zhou, JM,Dong, ZY,Wei, XC,et al. Growth of ZnO single crystal by chemical vapor transport method[C]. 2 XINJIEKOUWAI DAJIE, BEIJING 100088, PEOPLES R CHINA:METALLURGICAL INDUSTRY PRESS,2006:24: 4-7 Sp. Iss. SI.

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