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The photon scanning tunneling microscope and its applications 会议论文
JOURNAL OF TRACE AND MICROPROBE TECHNIQUES, 15 (4), GUANGZHOU, PEOPLES R CHINA, AUG 29-SEP 02, 1995
Authors:  Yao JE;  Guo N;  Gao S;  Wu SF;  Xia DK;  Shang GY;  Chu SC;  Li CJ;  He J;  Xu SH;  Yao JE Acad Sinica Beijing Lab Electron Microscopy POB 2724 Beijing 100080 Peoples R China.
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Photon Scanning Tunneling Microscope  Scanning Near-field Optical Microscope  Optical Microscopy  
Heteroepitaxy of cubic GaN: influence of interface structure 会议论文
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, (157), OXFORD, ENGLAND, APR 07-10, 1997
Authors:  Trampert A;  Brandt O;  Yang H;  Yang B;  Ploog KH;  Trampert A Paul Drude Inst Festkorperelekt Hausvogteipl 5-7 D-10117 Berlin Germany.
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Molecular-beam Epitaxy  Gan/gaas(001)  Growth  
The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
Authors:  Wang ZM;  Feng SL;  Lu ZD;  Zhao Q;  Yang XP;  Chen ZG;  Xu ZY;  Zheng HZ;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Growth  Interdiffusion  Islands  Scale  
Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文
APPLIED SURFACE SCIENCE, 123, CARDIFF, WALES, JUN 23-27, 1997
Authors:  Chen YH;  Yang Z;  Wang ZG;  Xu B;  Liang JB;  Qian JJ;  Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong.
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Znse/gaas Interface  States  
Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition 会议论文
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 177, CAIRNS, AUSTRALIA, JUL 27-AUG 01, 1997
Authors:  Yao ZY;  Jiang H;  Liu ZK;  Huang DD;  Qin FG;  Zhu SC;  Sun YX;  Zhu SC Peking Univ Dept Phys Beijing 100871 Peoples R China.
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Thin Films  Saturation Magnetization  Uniaxial Anisotropy  
Electronic investigation of self-organized InAs quantum dots 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
Authors:  Chen F;  Feng SL;  Yang XZ;  Zhao Q;  Wang ZM;  Wen LS;  Chen F Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
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Carrier Relaxation  
Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
Authors:  Wang ZM;  Feng SL;  Yang XP;  Deng YM;  Lu ZD;  Xu ZY;  Chen ZG;  Zheng HZ;  Han PD;  Wang FL;  Duan XF;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
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Gaas  Growth  
Material transport in self-assembled InAs/GaAs quantum dot ensemble 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
Authors:  Wang ZM;  Feng SL;  Yang XP;  Lu ZD;  Xu ZY;  Chen ZG;  Zheng HZ;  Wang FL;  Gao M;  Han PD;  Duan XF;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
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Growth  Transition  Gaas  
High-concentration hydrogen in unintentionally doped GaN 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
Authors:  Zhang JP;  Wang XL;  Sun DZ;  Li XB;  Kong MY;  Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhangjp@red.semi.ac.cn
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Gallium Nitride  Gas Source Molecular Beam Epitaxy  Hydrogen  Autodoping  Films  
Observation of defects in GaN epilayers 会议论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, TEMPLIN, GERMANY, SEP 07-10, 1997
Authors:  Kang JY;  Liu XL;  Ogawa T;  Kang JY Gakushuin Univ Dept Phys Tokyo 171 Japan.
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Scattering  Sapphire  Growth  
Characterization of GaSb substrate wafers for MOCVD III-V antimonides 会议论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, TEMPLIN, GERMANY, SEP 07-10, 1997
Authors:  Peng RW;  Ding YQ;  Xu CM;  Wang XG;  Peng RW Acad Sinica Shanghai Inst Met Shanghai 200050 Peoples R China.
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Vapor-phase Epitaxy  Growth  
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 会议论文
COMPOUND SEMICONDUCTORS 1997, 156, SAN DIEGO, CALIFORNIA, SEP 08-11, 1997
Authors:  Jiang DS;  Ramsteiner M;  Brandt O;  Ploog KH;  Tews H;  Graber A;  Averbeck R;  Riechert H;  Jiang DS Paul Drude Inst Solid State Elect D-10117 Berlin Germany.
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Shallow Donors  
MOVPE growth of GaN and LED on (111) MgAl2O4 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
Authors:  Duan SK;  Teng XG;  Wang YT;  Li GH;  Jiang HX;  Han P;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
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Gan  Mgal2o4  Movpe  Led  Diodes  
Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser 会议论文
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37 (6B), TOKYO, JAPAN, OCT 07-09, 1997
Authors:  Pan Z;  Zhang Y;  Du Y;  Wu RH;  Pan Z Tokyo Inst Technol Precis & Intelligence Lab Midori Ku 4259 Nagatsuta Yokohama Kanagawa 2268503 Japan.
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Vcsel  Selective Oxidation  Stability  Wet Oxidation  Microstructure  
The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
Authors:  Liu XL;  Wang LS;  Lu DC;  Wang D;  Wang XH;  Lin LY;  Liu XL Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: xlliu@red.semi.ac.cn
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Movpe  Gan  Gan Buffer  Heavy Si-doping  
High-field ferromagnetic resonance in fine particles 会议论文
PHYSICA B-CONDENSED MATTER, 246, SYDNEY, AUSTRALIA, AUG 04-06, 1997
Authors:  Respaud M;  Goiran M;  Yang F;  Broto JM;  Ely TO;  Amiens C;  Chaudret B;  Askenazy S;  Broto JM Inst Natl Sci Appl SNCMP Complexe Sci Rangueil F-31077 Toulouse France. 电子邮箱地址: Broto@insatlse.fr
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High-field Ferromagnetic Resonance  Fine Particles  
Sequential resonant tunnelling through Landau levels in GaAs/AlAs superlattices 会议论文
MICROELECTRONIC ENGINEERING, 43-4, LISBON, PORTUGAL, MAY 19-21, 1997
Authors:  Liu J;  Gornik E;  Xu SJ;  Zheng HZ;  Liu J Vienna Tech Univ Inst Festkorperelekt Floragasse 7-1 A-1040 Vienna Austria. 电子邮箱地址: j.liu.20@bham.ac.uk
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Gaas/alas  Superlattices  Transport  Tunnelling  Landau Level  Negative Differential Conductivity  Low-field Mobility  Semiconductor Superlattice  Temperature-dependence  Conductance  Transport  Localization  Minibands  
Resonant magnetopolaron effects in GaAs/AlGaAs multiple quantum well structures 会议论文
PHYSICA E, 2 (1-4), SANTA BARBARA, CALIFORNIA, JUL 14-18, 1997
Authors:  Wang YJ;  Nickel HA;  McCombe BD;  Peeters FM;  Shi JM;  Hai GQ;  Wu XG;  Eustis TJ;  Schaff W;  Wang YJ Florida State Univ Natl High Magenet Field Lab 1800 E Paul Dirac Dr Tallahassee FL 32306 USA.
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Resonant Magnetopolaron Effects  Gaas/algaas Quantum Well Structures  Interface Phonons  Electron-optical-phonon Interaction  Polaron-cyclotron-resonance  Phonon Modes  Gaas  Heterostructures  Superlattices  Electrons  
Formation mechanism of electric field domains 会议论文
MICROELECTRONIC ENGINEERING, 43-4, LISBON, PORTUGAL, MAY 19-21, 1997
Authors:  Sun BQ;  Liu ZX;  Jiang DS;  Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 10083 Peoples R China.
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Electric Field Domains  Gamma-gamma Resonant Tunnelling  Gamma-x Resonant Tunnelling  
High-field cyclotron resonance and electron-phonon interaction in modulation-doped multiple quantum well structures 会议论文
PHYSICA B-CONDENSED MATTER, 256, NIJMEGEN, NETHERLANDS, AUG 10-14, 1998
Authors:  Wang YJ;  Jiang ZX;  McCombe BD;  Peeters FM;  Wu XG;  Hai GQ;  Eustis TJ;  Schaff W;  Wang YJ Florida State Univ Natl High Magnet Field Lab Tallahassee FL 32310 USA. 电子邮箱地址: wang@magnet.fsu.edu
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Cyclotron Resonance  Electron-phonon Interaction  Electron-electron Interaction  High Magnetic Fields  Exchange Enhancement  Gaas  Heterostructures  Gas  Limit  Heterojunctions  Polarons  Modes  Level