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薄膜太阳能电池的研究进展 会议论文
, none, 2011
作者:  梁骏吾
Adobe PDF(17728Kb)  |  收藏  |  浏览/下载：1917/84  |  提交时间：2014/05/16
中国半导体硅材料发展战略研究-中国工程院咨询报告 会议论文
, none, 2002
作者:  梁骏吾
收藏  |  浏览/下载：1341/50  |  提交时间：2014/05/16
The interaction between impurities and defects 会议论文
, International Academic Publisher, 1989
作者:  Liang Junwu
收藏  |  浏览/下载：502/12  |  提交时间：2014/05/14
Thermodynamic and dynamic analyses of GaAs MOVPE process 会议论文
, TMS, Warrendale, PA., 1992
作者:  Yang Hui, Liang Junwu, Deng Lishen, Zeng Lianxi , Zhang Xia
收藏  |  浏览/下载：498/12  |  提交时间：2014/05/14
Behaviors of dislocations during SL's growth and crystal quality assessment 会议论文
, TMS, Warrendale, PA., 1992
作者:  Liang Junwu;  Yang Hui;  Deng Lishen;  Zeng Lianxi;  Zhang Xia
收藏  |  浏览/下载：681/19  |  提交时间：2014/05/14
杂质在硅和砷化镓中行为 会议论文
, 北京. 中国科协学会工作部, 1988
作者:  梁骏吾
Adobe PDF(1415Kb)  |  收藏  |  浏览/下载：558/89  |  提交时间：2014/05/14
The photon scanning tunneling microscope and its applications 会议论文
JOURNAL OF TRACE AND MICROPROBE TECHNIQUES, 15 (4), GUANGZHOU, PEOPLES R CHINA, AUG 29-SEP 02, 1995
作者:  Yao JE;  Guo N;  Gao S;  Wu SF;  Xia DK;  Shang GY;  Chu SC;  Li CJ;  He J;  Xu SH;  Yao JE Acad Sinica Beijing Lab Electron Microscopy POB 2724 Beijing 100080 Peoples R China.
Adobe PDF(1203Kb)  |  收藏  |  浏览/下载：1164/177  |  提交时间：2010/11/15
Photon Scanning Tunneling Microscope  Scanning Near-field Optical Microscope  Optical Microscopy  
Heteroepitaxy of cubic GaN: influence of interface structure 会议论文
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997, (157), OXFORD, ENGLAND, APR 07-10, 1997
作者:  Trampert A;  Brandt O;  Yang H;  Yang B;  Ploog KH;  Trampert A Paul Drude Inst Festkorperelekt Hausvogteipl 5-7 D-10117 Berlin Germany.
Adobe PDF(317Kb)  |  收藏  |  浏览/下载：1221/219  |  提交时间：2010/11/15
Molecular-beam Epitaxy  Gan/gaas(001)  Growth  
The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Wang ZM;  Feng SL;  Lu ZD;  Zhao Q;  Yang XP;  Chen ZG;  Xu ZY;  Zheng HZ;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(2780Kb)  |  收藏  |  浏览/下载：1150/142  |  提交时间：2010/11/15
Growth  Interdiffusion  Islands  Scale  
Optical anisotropy of InAs submonolayer quantum wells in a (311) GaAs matrix 会议论文
APPLIED SURFACE SCIENCE, 123, CARDIFF, WALES, JUN 23-27, 1997
作者:  Chen YH;  Yang Z;  Wang ZG;  Xu B;  Liang JB;  Qian JJ;  Chen YH Hong Kong Univ Sci & Technol Dept Phys Clear Water Bay Kowloon Hong Kong.
Adobe PDF(241Kb)  |  收藏  |  浏览/下载：1295/301  |  提交时间：2010/11/15
Znse/gaas Interface  States  
Formation and magnetic properties of Fe16N2 films prepared by ion-beam-assisted deposition 会议论文
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 177, CAIRNS, AUSTRALIA, JUL 27-AUG 01, 1997
作者:  Yao ZY;  Jiang H;  Liu ZK;  Huang DD;  Qin FG;  Zhu SC;  Sun YX;  Zhu SC Peking Univ Dept Phys Beijing 100871 Peoples R China.
Adobe PDF(166Kb)  |  收藏  |  浏览/下载：1320/281  |  提交时间：2010/11/15
Thin Films  Saturation Magnetization  Uniaxial Anisotropy  
Electronic investigation of self-organized InAs quantum dots 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Chen F;  Feng SL;  Yang XZ;  Zhao Q;  Wang ZM;  Wen LS;  Chen F Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(2402Kb)  |  收藏  |  浏览/下载：953/127  |  提交时间：2010/11/15
Carrier Relaxation  
Influence of interdot electronic coupling on photoluminescence spectra of self-assembled InAs/GaAs quantum dots 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Wang ZM;  Feng SL;  Yang XP;  Deng YM;  Lu ZD;  Xu ZY;  Chen ZG;  Zheng HZ;  Han PD;  Wang FL;  Duan XF;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(2139Kb)  |  收藏  |  浏览/下载：1179/149  |  提交时间：2010/11/15
Gaas  Growth  
Material transport in self-assembled InAs/GaAs quantum dot ensemble 会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:  Wang ZM;  Feng SL;  Yang XP;  Lu ZD;  Xu ZY;  Chen ZG;  Zheng HZ;  Wang FL;  Gao M;  Han PD;  Duan XF;  Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct Beijing 100083 Peoples R China.
Adobe PDF(2906Kb)  |  收藏  |  浏览/下载：1252/171  |  提交时间：2010/11/15
Growth  Transition  Gaas  
High-concentration hydrogen in unintentionally doped GaN 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
作者:  Zhang JP;  Wang XL;  Sun DZ;  Li XB;  Kong MY;  Zhang JP Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: zhangjp@red.semi.ac.cn
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1146/289  |  提交时间：2010/11/15
Gallium Nitride  Gas Source Molecular Beam Epitaxy  Hydrogen  Autodoping  Films  
Observation of defects in GaN epilayers 会议论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, TEMPLIN, GERMANY, SEP 07-10, 1997
作者:  Kang JY;  Liu XL;  Ogawa T;  Kang JY Gakushuin Univ Dept Phys Tokyo 171 Japan.
Adobe PDF(235Kb)  |  收藏  |  浏览/下载：1247/215  |  提交时间：2010/11/15
Scattering  Sapphire  Growth  
Characterization of GaSb substrate wafers for MOCVD III-V antimonides 会议论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, TEMPLIN, GERMANY, SEP 07-10, 1997
作者:  Peng RW;  Ding YQ;  Xu CM;  Wang XG;  Peng RW Acad Sinica Shanghai Inst Met Shanghai 200050 Peoples R China.
Adobe PDF(240Kb)  |  收藏  |  浏览/下载：1183/185  |  提交时间：2010/11/15
Vapor-phase Epitaxy  Growth  
Electronic and vibrational Raman scattering in resonance with yellow luminescence transitions in GaN on sapphire substrate 会议论文
COMPOUND SEMICONDUCTORS 1997, 156, SAN DIEGO, CALIFORNIA, SEP 08-11, 1997
作者:  Jiang DS;  Ramsteiner M;  Brandt O;  Ploog KH;  Tews H;  Graber A;  Averbeck R;  Riechert H;  Jiang DS Paul Drude Inst Solid State Elect D-10117 Berlin Germany.
Adobe PDF(268Kb)  |  收藏  |  浏览/下载：1369/249  |  提交时间：2010/11/15
Shallow Donors  
MOVPE growth of GaN and LED on (111) MgAl2O4 会议论文
JOURNAL OF CRYSTAL GROWTH, 189, TOKUSHIMA CITY, JAPAN, OCT 27-31, 1997
作者:  Duan SK;  Teng XG;  Wang YT;  Li GH;  Jiang HX;  Han P;  Lu DC;  Duan SK Chinese Acad Sci Inst Semicond Natl Integrated Optoelect Lab POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: skduan@red.semi.ac.cn
Adobe PDF(150Kb)  |  收藏  |  浏览/下载：1365/364  |  提交时间：2010/11/15
Gan  Mgal2o4  Movpe  Led  Diodes  
Stability improvement of selective oxidation during the fabrication of InGaAs/GaAs vertical cavity surface emitting laser 会议论文
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 37 (6B), TOKYO, JAPAN, OCT 07-09, 1997
作者:  Pan Z;  Zhang Y;  Du Y;  Wu RH;  Pan Z Tokyo Inst Technol Precis & Intelligence Lab Midori Ku 4259 Nagatsuta Yokohama Kanagawa 2268503 Japan.
Adobe PDF(465Kb)  |  收藏  |  浏览/下载：1066/257  |  提交时间：2010/11/15
Vcsel  Selective Oxidation  Stability  Wet Oxidation  Microstructure