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The effect of Fabry-Perot interference on the packaging of SOI-based optoelectronic devices 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Xin HL;  Chen P;  Li F;  Wang CX;  Cao P;  Liu YL;  Xin, HL, Chinese Acad Sci, Inst Semicond, Res & Dev Ctr Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(142Kb)  |  收藏  |  浏览/下载：1244/255  |  提交时间：2010/03/29
A low power consumption thermo-optic variable optical attenuator based on SOI material 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Fang, Q;  Li, F;  Wang, CX;  Xin, HL;  Liu, YL;  Fang, Q, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1084/240  |  提交时间：2010/03/29
Hetero-epitaxial growth of ZnO films on silicon by low-pressure metal organic chemical vapor deposition 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Wang, QY;  Shen, WJ;  Wang, J;  Wang, JH;  Zeng, YP;  Li, JM;  Wang, QY, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1235/210  |  提交时间：2010/03/29
Ultraviolet-laser Emission  Thin-films  Zinc-oxide  Room-temperature  
Improved diphasic nc-si/a-si : H I-layer materials using PECVD 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Hao, HY;  Zhang, SB;  Xu, YY;  Zeng, XB;  Diao, HW;  Kong, GL;  Liao, XB;  Hao, HY, Chinese Acad Sci, Inst Semicond, Ctr Condensed Matter Phys, State Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(129Kb)  |  收藏  |  浏览/下载：1256/230  |  提交时间：2010/03/29
Open-circuit Voltage  Silicon Solar-cells  Amorphous-silicon  Absorption  
Homoepitaxial growth and MOS structures of 4H-SiC on off oriented n-type (0001)Si-faces 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Sun, GS;  Ning, J;  Zhang, YX;  Gao, X;  Wang, L;  Zhao, WS;  Zeng, YP;  Li, JM;  Sun, GS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(201Kb)  |  收藏  |  浏览/下载：1307/208  |  提交时间：2010/03/29
4h-sic  Lpcvd Homoepitaxial Growth  Thermal Oxidization  Mos Structures  Hot-wall Cvd  
A silicon capacitive microphone based on oxidized porous silicon sacrificial technology 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Ning, J;  Liu, ZL;  Liu, HZ;  Ge, YC;  Ning, J, Chinese Acad Sci, Microelect R&D Ctr, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(151Kb)  |  收藏  |  浏览/下载：1039/186  |  提交时间：2010/03/29
Silicon Capacitive Microphone  Oxidized Porous Silicon  Sacrificial Layer  
Structural optimizations of SOI-based single-mode rib waveguide bends 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Chen, YY;  Yan, QF;  Yang, D;  Chen, SW;  Yu, JZ;  Chen, YY, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China.
Adobe PDF(138Kb)  |  收藏  |  浏览/下载：1118/216  |  提交时间：2010/03/29
Silicon-on-insulator  Bend Waveguide  Bend Loss  Integrated Optics  Silicon-on-insulator  
Electronic states of InAs verfically-assembled quantum disks in magnetic fields and two-electron quantum-disk qubit 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Dong, QR;  Niu, ZC;  Dong, QR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(608Kb)  |  收藏  |  浏览/下载：956/157  |  提交时间：2010/03/29
Dots  
High performance resonant tunneling diode on a new material structure 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Wang JL;  Liu ZL;  Wang LC;  Zeng YP;  Yang FH;  Bai YX;  Wang, JL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(535Kb)  |  收藏  |  浏览/下载：1226/245  |  提交时间：2010/03/29
Resonant Tunneling Diode  
Radiation response of partially-depleted MOS transistors fabricated in the fluorinated SIMOX wafers 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Li, N;  Zhang, GQ;  Liu, ZL;  Fan, K;  Zheng, ZS;  Lin, Q;  Zhang, ZX;  Lin, CL;  Li, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1649/231  |  提交时间：2010/03/29
Simox  Fluorine  Ionizing Radiation  
Influence of fluorine on radiation-induced charge trapping in the SIMOX buried oxides 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Zhang, GQ;  Liu, ZL;  Li, N;  Zhen, ZS;  Liu, GH;  Lin, Q;  Zhang, ZX;  Lin, CL;  Zhang, GQ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(144Kb)  |  收藏  |  浏览/下载：1632/231  |  提交时间：2010/03/29
Fluorine  Simox  Charge Trapping  Radiation  Sio2  
A simulation model of body contact structure in PD SOI analogue circuit 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Jiang, F;  Liu, ZL;  Jiang, F, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(131Kb)  |  收藏  |  浏览/下载：1071/165  |  提交时间：2010/03/29
Pid Soi Technology  Body Contact  
Effect of the implantation of fluorine on the mobility of channel electron for partially depleted SOI nMOSFET 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Zheng, ZS;  Liu, ZL;  Zhang, GQ;  Li, N;  Fan, K;  Zheng, ZS, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(519Kb)  |  收藏  |  浏览/下载：1251/244  |  提交时间：2010/03/29
The status, limits and countermeasures in the development of the silicon microelectronics industry 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Liu, ZL;  Liu, ZL, Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China.
Adobe PDF(530Kb)  |  收藏  |  浏览/下载：979/149  |  提交时间：2010/03/29
Silicon Microelectronics  Cmos  Theoretic Limit  Technologic Limit  Economic Limit