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砷化镓衬底上制备纳米尺寸坑的方法 专利
专利类型: 发明, 申请日期: 2007-01-24, 公开日期: 2009-06-04, 2009-06-11
Inventors:  李凯;  叶小玲;  王占国
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以原位垂直超晶格为模板定位生长量子线或点的方法 专利
专利类型: 发明, 申请日期: 2007-01-10, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王元立;  吴巨;  金鹏;  叶小玲;  张春玲;  黄秀颀;  陈涌海;  王占国
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Effect of substrate misorientation on the InAs/InAlAs/InP nanostructure morphology and lateral composition modulation in the InAlAs matrix 期刊论文
APPLIED PHYSICS LETTERS, 2007, 卷号: 90, 期号: 10, 页码: Art.No.103118
Authors:  Lei W;  Wang YL;  Chen YH;  Jin P;  Ye XL;  Xu B;  Wang ZG;  Lei, W, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: wen.lei@uni-due.de
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Inas Quantum Dots  
Anomalous photoluminescence of InAs quantum dots implanted by Mn ions 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2007, 卷号: 36, 期号: 2, 页码: 221-225
Authors:  Hu LJ;  Chen YH;  Ye XL;  Huang XQ;  Liang LY;  Ding F;  Wang ZG;  Hu, LJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: liangjun_hu@yahoo.com.cn
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Photoluminescence  
光致发光谱研究自组织InAs双模量子点态填充 期刊论文
光谱学与光谱分析, 2007, 卷号: 27, 期号: 11, 页码: 2178-2181
Authors:  贾国治;  姚江宏;  张春玲;  舒强;  刘如彬;  叶小玲;  王占国
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Mn离子注入InAs/GaAs量子点结构材料的光电性质研究 期刊论文
物理学报, 2007, 卷号: 56, 期号: 8, 页码: 4930-4935
Authors:  胡良均;  陈涌海;  叶小玲;  王占国
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